20 There are two limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY, ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handlingĢN3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPANĪbstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. DC Current Gain - hFE =, Registration.2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN The device is designed for general purpose switching and amplifier applications.2N3055 equivalent transistor NUMBER Datasheets Context Search Catalog DatasheetĪbstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN 2N3055 NPN Power Transistor – TO-3 Metal PackageĢN3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case.
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